TO-247 Power MOS V, 1000V 21A Metalloxid-N-Kanal-FET,
Anreicherungstyp (enhancement)
getestet:
N-Ch Enhancement mode MOSFET
Red-G Green-D Blue-S
Vgs(on)=4,429V at Id=5,03mA and Ig=2MikroA
Vgs(off)=3,431V at Id=5,0MikroA
gm=25,2mA-V at Id=3,0mA to 5,0mA
Rds(on)<1.0O at Id=5,0mA and Vgs=8,0V
with body diode

N-Ch Enhancement mode MOSFET
Red-G Green-D Blue-S
Vgs(on)=4,345V at Id=5,04mA and Ig=0MikroA
Vgs(off)=3,336V at Id=5,0MikroA
gm=26,2mA-V at Id=3,0mA to 5,0mA
Rds(on)<1.0O at Id=5,0mA and Vgs=8,0V
with body diode

N-Ch Enhancement mode MOSFET
Red-G Green-D Blue-S
Vgs(on)=4,849V at Id=5,02mA and Ig=0MikroA
Vgs(off)=3,863V at Id=4,9MikroA
gm=25,7mA-V at Id=3,0mA to 5,0mA
Rds(on)<1.0O at Id=5,0mA and Vgs=8,0V
with body diode